期刊
APPLIED PHYSICS LETTERS
卷 100, 期 9, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3687726
关键词
ferromagnetic resonance; gallium arsenide; g-factor; high-frequency effects; III-V semiconductors; iron; magnetic anisotropy; magnetic circular dichroism; magnetostriction; metallic thin films; semiconductor thin films
资金
- Deutsche Forschungsgemeinschaft (DFG) [SFB491]
We determined the magnetic anisotropy energy and g-factor of an uncapped 10 nm thick Fe/GaAs(110) film using a setup that allows frequency (1.5-26.5 GHz) as well as angular dependent ferromagnetic resonance measurements under ultrahigh vacuum conditions. The g-factor g=2.61 +/- 0.1 is unusually high at room temperature and can be interpreted as the result of an increased orbital moment due to strain. This interpretation is supported by more surface sensitive x-ray magnetic circular dichroism measurements which yield g=2.21 +/- 0.02 measured at remanence. The difference in g may be the result of magnetic field dependent magnetostriction which influences the orbital moment. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3687726]
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