期刊
APPLIED PHYSICS LETTERS
卷 100, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3684615
关键词
-
资金
- Air Force Office of Scientific Research (AFOSR) [FA9550-10-1-0010]
- National Science Foundation (NSF) [0933763]
- Directorate For Engineering
- Div Of Chem, Bioeng, Env, & Transp Sys [0933763] Funding Source: National Science Foundation
In nanostructured bulk materials, the additional interfaces in the material enhance phonon scattering and reduce the thermal conductivity. However, interfaces also scatter electrons and deteriorate charge carrier transport. In order to benefit from the interfacial effects, the crystallite size in the material must be small compared with phonon mean free path (PMFP) and large compared with the charge carrier mean free path (CMFP). In this paper, we solve the Boltzmann transport equation for charge carriers and phonons. We show that bulk nanostructuring of Mg2Si is not an efficient method to enhance the figure-of-merit as the PMFP and CMFP are in the same range. (C) 2012 American Institute of Physics. [doi:10.1063/1.3684615]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据