期刊
APPLIED PHYSICS LETTERS
卷 100, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3693150
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资金
- National Natural Science Foundation of China [60976010, 61076045, 11004020]
Undoped InN thin film was grown on p-GaN/Al2O3 (0001) template by molecular beam epitaxy. Near-infrared (NIR) electroluminescence (EL) that overlapped the optical communication wavelength range was realized using the n-InN/p-GaN heterojunction structure. The light emitting diode showed typical rectification characteristics with a turn-on voltage of around 0.8 V. A dominant narrow NIR emission peak was achieved from the InN side under applied forward bias. By comparing with the photoluminescence spectrum, the EL emission peak at 1573 nm was attributed to the band-edge emission of the InN film. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3693150]
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