期刊
APPLIED PHYSICS LETTERS
卷 101, 期 25, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4772548
关键词
-
资金
- National Science Fund for Distinguished Young Scholars [60925017]
- National Natural Science Foundation of China [10990100, 60836003, 60976045, 61176126]
- Tsinghua National Laboratory for Information Science and Technology (TNList) Cross-discipline Foundation
The effect of quantum well (QW) number on performances of InGaN/GaN multiple-quantum-well light-emitting diodes has been investigated. It is observed that V-defects, originated from various InGaN well layers intercepted by threading dislocations (TDs), increase in density and averaged size with more periods of QWs, resulting in larger reverse-bias leakage current and lower emission efficiency of light-emitting diodes. Conductive atomic force microscopy measurements demonstrate that V-defects may preferentially capture carriers, subsequently enhance local current and nonradiative recombinations at associated TD lines, which suggest that TD lines with V-defects at vertex have larger influence on emission efficiency than those without V-defects. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772548]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据