期刊
APPLIED PHYSICS LETTERS
卷 100, 期 9, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3690901
关键词
electrical conductivity; gallium compounds; III-V semiconductors; impurity states; semiconductor epitaxial layers; valence bands
资金
- EU [PIEF-GA-2010-272612]
- COST Action [MP0805]
We report p-type conductivity in nominally undoped GaAs1-xBix epilayers for a wide range of Bi-concentrations (0.6% <= x <= 10.6%). The counterintuitive increase of the conductivity with increasing x is paralleled by an increase in the density of free holes by more than three orders of magnitude in the investigated Bi-concentration range. The p-type conductivity results from holes thermally excited from Bi-induced acceptor levels lying at 26.8 meV above the valence band edge of GaAs1-xBix with concentration up to 2.4 x 10(17) cm(-3) at x = 10.6%. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3690901]
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