期刊
APPLIED PHYSICS LETTERS
卷 100, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3693377
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资金
- NSF [0824157]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0824157] Funding Source: National Science Foundation
Carrier dynamics of the electrolyte-induced inversion layer carbon nanotube-silicon Schottky junction solar cells is explored by numerical simulations. Operation mechanisms of the solar cells with and without the electrolyte-induced inversion layer are presented and compared, which clarifies the current flow mechanisms in a solar cell with an induced inversion layer. A heavily doped back contact layer can behave as a hole block layer. In addition to lowering contact resistance and surface recombination, it is particularly useful for improving carrier separation in an electrolyte-induced inversion layer solar cell or a metal-insulator-semiconductor grating solar cell. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3693377]
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