Localized surface plasmon resonances in highly doped semiconductors nanostructures

We demonstrate the occurrence of localized surface plasmon resonances (LSPRs) in periodic arrays of highly doped/un-doped InAsSb/GaSb semiconductor nanostructures, where highly doped InAsSb is degenerated and exhibits a metallic behavior while being lattice-matched onto GaSb. Reflectance spectroscopy allows investigating the impact of the geometrical and physical properties of both InAsSb and GaSb materials on the LSPR. Our results show that these InAsSb/GaSb nanostructures form the building blocks of metal-free, all-semiconductor infrared plasmonic devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4760281]