4.6 Article

Coupling effects in inductive discharges with radio frequency substrate biasing

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APPLIED PHYSICS LETTERS
卷 100, 期 2, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.3675879

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  1. GRK [1051]
  2. RUB Research Department Plasma

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Low pressure inductively coupled plasmas (ICP) operated in neon at 27.12 MHz with capacitive substrate biasing (CCP) at 13.56 MHz are investigated by phase resolved optical emission spectroscopy, voltage, and current measurements. Three coupling mechanisms are found potentially limiting the separate control of ion energy and flux: (i) Sheath heating due to the substrate biasing affects the electron dynamics even at high ratios of ICP to CCP power. At fixed CCP power, (ii) the substrate sheath voltage and (iii) the amplitude as well as frequency of plasma series resonance oscillations of the RF current are affected by the ICP power. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3675879]

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