Multi-state resistive switching memory with secure information storage in Au/BiFe0.95Mn0.05O3/La5/8Ca3/8MnO3 heterostructure

The ferroelectric polarization dependent bipolar and conductive filament related unipolar resistive switching behaviors are investigated systematically in Au/BiFe0.95Mn0.05O3/La5/8Ca3/8MnO3 heterostructure. The results show that after conductive filaments are formed, the ferroelectric state previously polarized will keep almost unchanged. By combining the two resistive switching mechanisms together under appropriate programming conditions, a tri-state-like resistive switching behavior is realized, finding effective routes in designing high-density storage. According to these distinctive characteristics, a prototype memory device with secure information storage is properly designed as an example of promising applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4714514]