期刊
APPLIED PHYSICS LETTERS
卷 85, 期 15, 页码 3134-3135出版社
AMER INST PHYSICS
DOI: 10.1063/1.1803935
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p-type ZnO thin films have been realized by the N-Al co-doping method. Secondary ion mass spectroscopy demonstrated that the N incorporation was enhanced evidently by the presence of Al in ZnO. The lowest room-temperature resistivity was found to be 57.3 Omega cm with a Hall mobility of 0.43 cm(2)/V s and carrier concentration of 2.25 X 10(17) cm(-3) for the N-Al co-doped p-type ZnO film deposited on glass substrate. The results were much better than those for the N-doped p-type. ZnO. Moreover, the co-doped film possesses a good crystallinity with c-axis orientation and a high transmittance (90%) in the visible region. (C) 2004 American Institute Physics.
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