Stress in hard metal films

In the absence of thermal stress, tensile stress in hard metal films is caused by grain boundary shrinkage and compressive stress is caused by ion peening. It is shown that the two contributions are additive. Moreover tensile stress generated at the grain boundaries does not relax by ion bombardment. In polycrystalline hard metal films the grain structure evolves during growth, leading to wider grains higher up in the film. The tensile component of the stress in the film is generated at the grain boundaries and therefore depends on film thickness. The effect of ion bombardment is independent of grain size, therefore compressive stress does not depend on film thickness. As a result in polycrystalline films deposited under a bias voltage a stress gradient exists from tensile at the interface to compressive at the top of the film. (C) 2004 American Institute of Physics.