4.6 Article

Surface acoustic wave nebulization on nanocrystalline ZnO film

期刊

APPLIED PHYSICS LETTERS
卷 101, 期 19, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.4767126

关键词

dissociation; high-frequency effects; II-VI semiconductors; nanostructured materials; semiconductor devices; semiconductor thin films; sprays; surface acoustic wave transducers; surface acoustic waves; thin film devices; wide band gap semiconductors; zinc compounds

资金

  1. Carnegie Trust Funding
  2. Royal Society of Edinburgh
  3. Scottish Sensing Systems Centre (S3C)
  4. EPSRC (Engineering and Physical Sciences Research Council) IeMRC Smart Microsystems project [FS/01/02/10]
  5. Engineering and Physical Sciences Research Council [EP/H03014X/1] Funding Source: researchfish
  6. EPSRC [EP/H03014X/1] Funding Source: UKRI

向作者/读者索取更多资源

Surface acoustic wave (SAW) nebulization/atomization has been realised on thin ZnO film based SAW devices. The surface acoustic wave nebulization (SAWN) process has been observed to produce significant mist generation and ejected satellite droplets. By modifying the geometry of the interdigitated transducers to reduce the wavelengths from 400 mu m to 120 mu m, higher frequency SAWN has been achieved by increasing radio frequency driving frequencies from 11.8 MHz to 37.2MHz, respectively. Compared with the commonly used LiNbO3 SAWN devices, ZnO film devices exhibit better thermal dissipation, and to date, they have shown no susceptibility to substrate failure during fabrication or operation. They also have the added advantage of the technology being suitable for direct integration with microsystems and integrated circuit microelectronics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767126]

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