Low leakage current in metal-insulator-metal capacitors of structural Al2O3/TiO2/Al2O3 dielectrics

Metal-insulator-metal (MIM) capacitors with Al2O3/TiO2/Al2O3 (ATA) dielectrics were fabricated and investigated. At 0V and frequencies of 100 kHz and 1 MHz, the MIM capacitors with ATA (3/20/3 nm) and ATA (6/20/6 nm) thin films had low leakage current densities of approximately 5.2 x 10(-13) and 1.5 x 10(-13) A/cm(2), respectively, and high capacitance densities of similar to 19.48 and similar to 20.13 fF/mu m(2), respectively. The frequency dispersion effect for these MIM capacitors was very small. The electrical transport mechanism, which is the device conduction mechanism, was determined for the varying structures of MIM capacitors. (C) 2012 American Institute of Physics. [doi:10.1063/1.3687702]