Effects of rapid thermal annealing on GaAs1-xBix alloys

The effects of rapid thermal annealing on the optical and structural properties of GaAs1-xBix alloys for x ranging from 0.022 to 0.065 were investigated. At room temperature, the annealed GaAs1-xBix showed modest improvement (similar to 3 times) in photoluminescence (PL) while the PL peak wavelength remained relatively unchanged. It was found that bismuth related defects are not easily removed by annealing and the PL improvement may be dominated by the reduction of other types of defects including arsenic and gallium related defects. Also, the optimum annealing temperature is Bi composition dependent. For samples with x < 0.048, the optimum annealing temperature is 700 degrees C but reduces to 600 degrees C for higher compositions. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4731784]