期刊
APPLIED PHYSICS LETTERS
卷 85, 期 16, 页码 3429-3431出版社
AMER INST PHYSICS
DOI: 10.1063/1.1808227
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The stabilities of clean and hydrogen covered GaN(000-1) surfaces are determined using density functional theory together with a finite temperature thermodynamics approach. Hydrogen has an extremely high affinity for the N-face surface: Even under ultrahigh vacuum conditions as realized in molecular beam epitaxial growth, with a residual hydrogen pressure of 10(-12) atm, the hydrogen terminated surface is, for very N-rich conditions, more stable than any clean surface. A transition to a surface covered by a Ga adlayer is predicted to occur as the Ga chemical potential increases. In typical metalorganic chemical vapor deposition conditions the (000-1) surface is predicted to be covered by 0.75 monolayers of hydrogen. The slower growth rate on the (000-1) surface in comparison to the (0001) surface is attributed to low adsorption of N on the H-covered (000-1) surface. (C) 2004 American Institute of Physics.
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