Pentacene field-effect transistors on plastic films operating at high temperature above 100 °C

We have manufactured pentacene field-effect transistors (FETs) on polyimide base films with polyimide gate dielectric layers, and characterized electronic performance and surface morphology with application of heat in the temperature range from 30 to 210 degreesC. It is found that mobility of pentacene FETs is enhanced from 0.27 to 0.71 cm(2)/V s when measurement temperatures varies from 30 to 160 degreesC under light-shielding nitrogen environment. To investigate postannealing effects, we have measured transfer curves at 30 degreesC after many heat cycles at various temperatures. Mobility is almost constant even after annealing at 130 degreesC, showing the excellent stability of the present device at high temperatures. (C) 2004 American Institute of Physics.