期刊
APPLIED PHYSICS LETTERS
卷 100, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3694054
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资金
- Singapore National Research Foundation [NRF-RF-2009-09, NRF-CRP-6-2010-2]
- Singapore Agency for Science, Technology and Research (A*STAR) Science and Engineering Research Council [0921010057]
- National Natural Science Foundation of China (NSFC) [61006037]
- Tianjin Natural Research Foundation [11JCZDJC21900]
A redshift of the peak emission wavelength was observed in the blue light emitting diodes of InGaN/GaN grown with a higher temperature interlayer that was sandwiched between the low-temperature buffer layer and high-temperature unintentionally doped GaN layer. The effect of interlayer growth temperature on the emission wavelength was probed and studied by optical, structural, and electrical properties. Numerical studies on the effect of indium composition and quantum confinement Stark effect were also carried out to verify the experimental data. The results suggest that the redshift of the peak emission wavelength is originated from the enhanced indium incorporation, which results from the reduced strain during the growth of quantum wells. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3694054]
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