Organic integrated complementary inverters with ink-jet printed source/drain electrodes and sub-micron channels

We have demonstrated device operation of down-scaled n-type field effect transistors (FETs) with ink-jet printed source/drain contacts and sub-mu m channel length, using the P(NDI2OD-T2) semiconducting polymer as active material. We integrated these devices with down-scaled p-type FETs made with bis(triisopropylsilylethynyl)pentacene to fabricate complementary inverter gates, in which both transistors and the printed interconnections were implemented on the same substrate. The devices operate at 10 V supply voltage, achieve noise margin values of 56% of V-DD/2 and a gain higher than 10. They are therefore suitable for printed, high performance organic integrated circuits with low supply voltage. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3696487]