相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization
Giuseppe Greco et al.
NANOSCALE RESEARCH LETTERS (2011)
Effects of Nitride-Based Plasma Pretreatment Prior to SiNx Passivation in AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrates
Ji Ha Kim et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2010)
Persistent photoconductivity and carrier transport in AlGaN/GaN heterostructures treated by fluorine plasma
B. K. Li et al.
APPLIED PHYSICS LETTERS (2008)
Barrier inhomogeneity and electrical properties of Pt/GaN Schottky contacts
Ferdinando Iucolano et al.
JOURNAL OF APPLIED PHYSICS (2007)
Barrier inhomogeneity and electrical properties of Pt/GaN Schottky contacts
Ferdinando Iucolano et al.
JOURNAL OF APPLIED PHYSICS (2007)
Impact of CF4 plasma treatment on GaN
Rongming Chu et al.
IEEE ELECTRON DEVICE LETTERS (2007)
Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode
Yong Cai et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2006)
High-performance E-mode AlGaN/GaN HEMTs
T. Palacios et al.
IEEE ELECTRON DEVICE LETTERS (2006)
Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N/GaN grown by molecular-beam epitaxy -: art. no. 023703
H Zhang et al.
JOURNAL OF APPLIED PHYSICS (2006)
Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors
J Kotani et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2005)
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Y Cai et al.
IEEE ELECTRON DEVICE LETTERS (2005)
Reasons for obtaining an optical dielectric constant from the Poole-Frenkel conduction behavior of atomic-layer-deposited HfO2 films -: art. no. 0729030
DS Jeong et al.
APPLIED PHYSICS LETTERS (2005)
Electrical characteristics of AlxGa1-xN Schottky diodes prepared by a two-step surface treatment
A Motayed et al.
JOURNAL OF APPLIED PHYSICS (2004)
Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers
T Hashizume et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2004)
Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors
T Hashizume et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2003)
Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy
A Hierro et al.
APPLIED PHYSICS LETTERS (2002)
Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures
T Hashizume et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2001)
Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy
JWP Hsu et al.
APPLIED PHYSICS LETTERS (2001)
Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes
JWP Hsu et al.
APPLIED PHYSICS LETTERS (2001)
Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors
R Dimitrov et al.
SOLID-STATE ELECTRONICS (2000)