期刊
APPLIED PHYSICS LETTERS
卷 100, 期 21, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4720406
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资金
- David R. Atkinson Center for a Sustainable Future
- National Science Foundation through the Center for Nanoscale Systems (NSF) [EEC-0117770, 0646547]
- National Science Foundation (NSF) [ECS-0335765]
- Div Of Engineering Education and Centers
- Directorate For Engineering [0646547] Funding Source: National Science Foundation
Using site controlled growth of single vapor-liquid-solid silicon nanowires high aspect ratio atomic force microscope probes are fabricated on a wafer scale. Nanowire probe aspect ratios as high as 90:1 are demonstrated. Probe performance and limitations are explored by imaging high aspect ratio etched silicon structures using atomic force microscopy. Silicon nanowire probes are an ideal platform for non-destructive topographic imaging of high aspect ratio features. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4720406]
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