期刊
APPLIED PHYSICS LETTERS
卷 100, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4716983
关键词
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资金
- Semiconductor Research Corporation (SRC)
- Nanoelectronics Research Initiative (NRI)
- National Institute of Standards and Technology (NIST) through the Midwest Institute for Nanoelectronics Discovery (MIND)
- Office of Naval Research (ONR)
- National Science Foundation (NSF)
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0802125] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1232191] Funding Source: National Science Foundation
Graphene nanoribbon (GNR) field-effect transistors (FETs) with widths down to 12 nm have been fabricated by electron beam lithography using a wafer-scale chemical vapor deposition (CVD) process to form the graphene. The GNR FETs show drain-current modulation of approximately 10 at 300K, increasing to nearly 10(6) at 4K. The strong temperature dependence of the minimum current indicates the opening of a bandgap for CVD-grown GNR-FETs. The extracted bandgap is estimated to be around 0.1 eV by differential conductance methods. This work highlights the development of CVD-grown large-area graphene and demonstrates the opening of a bandgap in nanoribbon transistors. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4716983]
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