期刊
APPLIED PHYSICS LETTERS
卷 100, 期 22, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4724108
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资金
- Deutsche Forschungsgemeinschaft [SFB 917]
- NRW-EU Ziel
- HASYLAB
We investigated the influence of Ti top electrodes on the resistive switching properties of SrTiO3 thin film devices. Above a Ti layer thickness of 5 nm, the initial resistance is strongly reduced, giving rise to forming-free devices. Hard x-ray photoemission experiments reveal the Ti layer to be composed of several oxide phases, induced by the redox-reaction at the Ti/SrTiO3 interface. Grazing incidence small angle x-ray scattering measurements indicate that the reduction of the SrTiO3 thin film occurs in a filamentary way. We attribute this behavior to the preferential reduction of SrTiO3 thin films along highly defective areas. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4724108]
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