期刊
APPLIED PHYSICS LETTERS
卷 101, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4766737
关键词
cooling; electric breakdown; hafnium compounds; platinum; switching; switching circuits; titanium
资金
- National Basic Research of China
- National Natural Science Foundation of China
- Chinese Academy of Sciences
- Beijing Municipal Natural Science Foundation
Dynamic processes of resistance switching have been systemically investigated for the Ti/HfO2/Pt bipolar devices. Different transient characteristics were observed in the set and reset processes. The set process consisted of a waiting step and a following abrupt transition, whereas the reset process demonstrated a gradual resistance change. Nonlinear dependence of set time on pulse voltage was observed and explained by the thermally accelerated dielectric breakdown of local switching regions. The accumulation and dissipation effects observed for different pulse treatments strongly supported the proposed model, which suggests a possible approach to overcome the voltage-time dilemma. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766737]
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