Investigation of plasma-doped fin structure and characterization of dopants by atom probe tomography

As and P dopants in a plasma-doped Si-based fin structure were analyzed using atom probe tomography. The distributions and concentrations of As and P atoms in various regions of the fin structure and the oxidation levels for different dopants were determined. Most dopants were segregated at the fin boundary, and the As and P concentrations exceeded 9 x 10(20) atoms/cm(3) and 2 x 10(20) atoms/cm(3), respectively. The atomic oxygen and SiO2 concentrations depended on the dopant type. The larger and heavier As dopant severely damaged the surface of the fin structure and could cause more severe oxidation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766440]