期刊
APPLIED PHYSICS LETTERS
卷 101, 期 22, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4768296
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资金
- NSERC
- DARPA E-PHI
We demonstrate an ultra-thin silicon waveguide for wavelengths around 1.55 mu m, and mode converters designed for transitions to and from standard 500 nm x 220 nm strip waveguides. The devices were fabricated in a CMOS-compatible process requiring two photolithography and etch steps. The ultrathin waveguides exhibited losses of 2.01 +/- 0.231 dB/cm, exhibited bend radii as small as 30 mu m with losses of 0.05 +/- 0.005 dB per bend, and exhibited coupling losses of 0.66 +/- 0.014 dB to standard strip waveguides. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768296]
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