期刊
APPLIED PHYSICS LETTERS
卷 101, 期 26, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4773510
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资金
- ONR DRIFT MURI
- NSF MRSEC at UCSB
- UCSB Nanofabrication Facility, part of the NSF
AlxGa1-xN/GaN (x=0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of similar to 2 x 10(10), similar to 5 x 10(8), and similar to 5 x 10(7) cm(-2), respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773510]
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