期刊
APPLIED PHYSICS LETTERS
卷 99, 期 11, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3636417
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资金
- European Community
- Free State of Saxony
We report the observation of ferroelectricity in capacitors based on hafnium-zirconium-oxide. Hf0.5Zr0.5O2 thin films of 7.5 to 9.5 nm thickness were found to exhibit ferroelectric polarization-voltage hysteresis loops when integrated into TiN-based metal-insulator-metal capacitors. A remnant polarization of 16 mu C/cm(2) and a high coercive field of 1 MV/cm were observed. Further proof for the ferroelectric nature was collected by quasi-static polarization-voltage hysteresis, small signal capacitance-voltage, and piezoelectric measurements. Data retention characteristics were evaluated by a Positive Up Negative Down pulse technique. No significant decay of the initial polarization state was observed within a measurement range of up to two days. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3636417]
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