Optical and electrical characterization of InGaBiAs for use as a mid-infrared optoelectronic material

In(0.53)Ga(0.47)Bi(x)As(1-x) films were grown on InP:Fe substrates by molecular beam epitaxy, with Bi concentrations up to x = 3.60%. Bi content in the epilayers was determined by Rutherford backscattering spectroscopy, and channeling measurements show Bi incorporating substitutionally. Unlike previous work, electrical and optical data are obtained for all samples. A redshift in peak wavelength of about 56 meV/%Bi was observed using spectrophotometry. The valence band anti-crossing model is applied, showing In(y)Ga(1-y)Bi(x)As(1-x) lattice-matched to InP is possible by varying the composition, with a theoretical cutoff wavelength of about 6 pm. (C) 2011 American Institute of Physics. [doi:10.1063/1.3614476]