Room temperature device performance of electrodeposited InSb nanowire field effect transistors

InSb nanowires have been formed by electrodeposition in porous anodic alumina templates and employed as transistor channels. The 100 nm diameter nanowires had a zinc blende crystal structure. Single-nanowire field-effect transistors (NW-FETs) with a channel length of 500 nm exhibited on-currents of similar to 40 mu A, on/off ratios of similar to 16-20, drain conductances of similar to 71 mu S and field-effect electron mobility of similar to 1200 cm(2) V-1 s(-1). Compared with reported NW-FETs, the on-current is large and the current saturation occurs at low source-drain voltages. These characteristics can be understood in terms of velocity saturation effects with enhanced scattering. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3587638]