期刊
APPLIED PHYSICS LETTERS
卷 99, 期 24, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3662043
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资金
- NSF [DMR-1122594]
- FENA FCRP
- Air Force MURI
- DARPA under the CERA
- National Research Foundation of Korea [2011-0014209] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1122594] Funding Source: National Science Foundation
Electron tunneling through atomically flat and ultrathin hexagonal boron nitride (h-BN) on gold-coated mica was investigated using conductive atomic force microscopy. Low-bias direct tunneling was observed in mono-, bi-, and tri-layer h-BN. For all thicknesses, Fowler-Nordheim tunneling (FNT) occurred at high bias, showing an increase of breakdown voltage with thickness. Based on the FNT model, the barrier height for tunneling (3.07 eV) and dielectric strength (7.94 MV/cm) of h-BN are obtained; these values are comparable to those of SiO2. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3662043]
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