期刊
APPLIED PHYSICS LETTERS
卷 99, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3634066
关键词
organic field effect transistors; oxidation; thermodynamics
During prolonged application of a gate bias, organic field-effect transistors show a gradual shift of the threshold voltage towards the applied gate bias voltage. The shift follows a stretched-exponential time dependence governed by a relaxation time. Here, we show that a thermodynamic analysis reproduces the observed exponential dependence of the relaxation time on the oxidation potential of the semiconductor. The good fit with the experimental data validates the underlying assumptions. It demonstrates that this operational instability is a straightforward thermodynamically driven process that can only be eliminated by eliminating water from the transistor. (C) 2011 American Institute of Physics. [doi:10.1063/1.3634066]
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