期刊
APPLIED PHYSICS LETTERS
卷 98, 期 25, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3601857
关键词
electroluminescence; energy gap; gallium compounds; III-V semiconductors; light emitting diodes; photoconductivity; photoluminescence; semiconductor quantum wells
资金
- Region Bretagne
- GENCI-CINES [2010-[c2010096472]]
- FEDER
This letter deals with the electroluminescence emission at room temperature of two light-emitting diodes on GaP substrate, based on ternary GaAsP/GaP and quaternary GaAsPN/GaPN multiple quantum wells. In agreement with tight-binding calculations, an indirect band gap is demonstrated from the temperature-dependent photoluminescence for the first structure. High efficiency photoluminescence is then observed for the second structure. Strong electroluminescence and photocurrent are measured from the diode structures at room temperature at wavelengths of 660 nm (GaAsP/GaP) and 730 nm (GaAsPN/GaPN). The role of the incorporation of nitrogen on the optical band gap and on the nature of interband transitions is discussed. (C) 2011 American Institute of Physics. [doi:10.1063/1.3601857]
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