期刊
APPLIED PHYSICS LETTERS
卷 99, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3617418
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资金
- Ministry of Economic Affairs of the Republic of China (MOEA)
- National Science Council of Taiwan [NSC 99-2120-M-009-007, 98-2923-E-009-001-MY3]
We demonstrate a GaN-based high-Q microcavity light emitting diode (MCLED) with a buried AlN current aperture. A thin AlN layer is inserted on the InGaN/GaN multiple quantum wells as a current blocking layer and an optical confinement layer. The GaN-based MCLED is composed of a 29-pair GaN/AlN distributed Bragg reflector (DBR), an eight-pair of SiO(2)/Ta(2)O(5) dielectric DBR, and a three-lambda optical thickness InGaN/GaN active region. The current can be injected more effectively in the MCLED with a buried AlN current aperture. The output emission has a dominant emission peak wavelength at 440 nm with a very narrow linewidth of 0.52 nm, corresponding to a cavity Q-value of 846 at a driving current of 5 mA. (C) 2011 American Institute of Physics. [doi:10.1063/1.3617418]
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