期刊
APPLIED PHYSICS LETTERS
卷 99, 期 11, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3640223
关键词
-
资金
- National Basic Research Program of China [2007CB613305]
- NSFC [50732004, 10874077, 50902068, 60906025]
- Jiangsu Provincial Science and Technology Research Program [BE2009140]
- Nature Science Foundation of Jiangsu Province [BK2008019]
- Fok Ying Tong Education Foundation [122028]
The photocurrent and incident photon conversion efficiency of In0.20Ga0.80N increased about 2 times after a simple electrochemical surface treatment. X-ray photoelectron spectroscopy and photoluminescence analysis suggested that In-rich InGaN region on the surface of the In0.20Ga0.80N electrode was removed by using the electrochemical surface treatment. The enhancement of the photocurrent was attributed to the removal of In-rich InGaN phases caused by indium segregations on the surface of the electrode, which played a major role as surface recombination centers of photo-generated electron-hole pairs. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3640223]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据