期刊
APPLIED PHYSICS LETTERS
卷 98, 期 24, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3584137
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资金
- National Science Foundation [1106444]
- RFBR [11-02-00013]
We report on the broadband terahertz response of InGaAs/GaAs high electron mobility transistors operating at 1.63 THz and room temperature deep in the saturation regime. We demonstrate that responses show linear increase with drain-to-source voltage (or drain-bias current) and might reach very high values up to 170 V/W. We also develop a phenomenological theory valid both in the Ohmic and in the saturation regimes. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3584137]
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