期刊
APPLIED PHYSICS LETTERS
卷 99, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3636110
关键词
Hall effect; III-V semiconductors; indium compounds; insulated gate field effect transistors; leakage currents; semiconductor-insulator boundaries; tunnelling
资金
- FCRP/MSD
- NSF E3S Center
- Office of Science, Office of Basic Energy Sciences, and Division of Materials Sciences and Engineering of the U.S. Department of Energy [De-Ac02-05Ch11231]
- Electronic Materials (E-Mat) program
- Sloan Research Fellowship
- NSF
- Sunchon National University
- National Science Council, Taiwan [NSC 98-2112-M-007-025-MY3]
- AFOSR [FA9550-10-1-0113, FA9550-09-1-0231]
The effect of body thickness (5-13 nm) on the leakage currents of top-gated, InAs-on-insulator field-effect-transistors with a channel length of similar to 200 nm is explored. From a combination of experiments and simulation, it is found that the OFF-state currents are primarily dominated by Shockley Read Hall recombination/generation and trap-assisted tunneling. The OFF currents are shown to decrease with thickness reduction, highlighting the importance of the ultrathin body device configuration. The devices exhibit promising performances, with a peak extrinsic and intrinsic transconductances of similar to 1.7 and 2.3 mS/mu m, respectively, at a low source/drain voltage of 0.5 V and a body thickness of similar to 13 nm. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3636110]
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