期刊
APPLIED PHYSICS LETTERS
卷 99, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3637633
关键词
atomic force microscopy; electric breakdown; elemental semiconductors; grain boundaries; hafnium compounds; MIS structures; silicon; silicon compounds
资金
- Spanish MICINN [TEC2010-16126]
- Generalitat de Catalunya [2009SGR-783]
The evolution of the electrical properties of HfO2/SiO2/Si dielectric stacks under electrical stress has been investigated using atomic force microscope-based techniques. The current through the grain boundaries (GBs), which is found to be higher than thorough the grains, is correlated to a higher density of positively charged defects at the GBs. Electrical stress produces different degradation kinetics in the grains and GBs, with a much shorter time to breakdown in the latter, indicating that GBs facilitate dielectric breakdown in high-k gate stacks. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3637633]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据