Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si

We have investigated specifically designed GaSb-based laser diodes epitaxially grown on a Si substrate. We demonstrate continuous-wave operation of these laser diodes emitting near 2 pm up to 35 degrees C with several mW/facet output powers, limited by our experimental setup. Our results open the way to direct monolithic HI-V/Si integration. (C) 2011 American Institute of Physics. [doi:10.1063/1.3644983]