期刊
APPLIED PHYSICS LETTERS
卷 99, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3607484
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资金
- IAMDN of Rutgers University
- National Science Foundation (NSF) [DMR-0845464]
- Office of Naval Research (ONR) [N000140910749]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [845464] Funding Source: National Science Foundation
Topological insulators (TIs) are predicted to be composed of an insulating bulk state along with conducting channels on the boundary of the material. In Bi2Se3, however, the Fermi level naturally resides in the conduction band due to intrinsic doping by selenium vacancies, leading to metallic bulk states. In such non-ideal TIs, it is not well understood how the surface and bulk states behave under environmental disorder. In this letter, based on transport measurements of Bi2Se3 thin films, we show that the bulk states are sensitive to environmental disorder but the surface states remain robust. (C) 2011 American Institute of Physics. [doi:10.1063/1.3607484]
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