期刊
APPLIED PHYSICS LETTERS
卷 99, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3624472
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资金
- DARPA SyNAPSE
- NSF [ECCS 0950305]
- Nanoelectronics Research Initiative (NRI) of the Semiconductor Research Corporation (SRC)
- Stanford Graduate Fellowship
- Division Of Physics
- Direct For Mathematical & Physical Scien [830228] Funding Source: National Science Foundation
The conduction mechanism of metal oxide resistive switching memory is debated in the literature. We measured the I-V characteristics below the switching voltages through TiN/HfOx/Pt memory stack and found the conduction cannot be described by the commonly used Poole-Frenkel model, because the fitted dielectric constant and the trap energy are unreasonable as compared to their known values. Therefore, we provide an alternate viewpoint based on a trap-assisted-tunneling model. Agreement of the bias polarity/temperature/resistance state-dependent conduction behavior was achieved between this model and experimental data. And insights for the multilevel capability due to the control of tunneling distance were obtained. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3624472]
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