Carbon nanotube thin film transistors on flexible substrates

Carbon nanotube thin film transistors (CNT-TFTs) are fabricated on flexible substrates using purified, surfactant-based CNT suspensions, with >95% semiconducting CNT fraction. The TFTs are made up of local bottom-gated structures with aluminum oxide as the gate dielectric. The devices exhibit high ON current densities (0.1 mu A/mu m) and on-off ratios (similar to 10(5)) with mobility values ranging from 10-35 cm(2)/Vs. A detailed numerical model is used to understand the TFT performance and its dependence on device parameters such as TFT channel length, CNT density, and purity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3622767]