期刊
APPLIED PHYSICS LETTERS
卷 99, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3624923
关键词
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资金
- AFOSR-DCT [FA9550-09-1-0493]
- NSF-NEB [2020]
- NSF-ECCS [0824075, 054782, 1102092]
- U.S. ONR [N0000140610123]
- Direct For Mathematical & Physical Scien [1124601] Funding Source: National Science Foundation
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1102092, 0824075] Funding Source: National Science Foundation
- Division Of Materials Research [1124601] Funding Source: National Science Foundation
Recent experimental breakthroughs have demonstrated that the electron spin in silicon can be reliably injected and detected as well as transferred over distances exceeding 1 mm. We propose an on-chip communication paradigm which is based on modulating spin polarization of a constant current in silicon wires. We provide figures of merit for this scheme by studying spin relaxation and drift-diffusion models in silicon. (C) 2011 American Institute of Physics. [doi:10.1063/1.3624923]
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