期刊
APPLIED PHYSICS LETTERS
卷 98, 期 22, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3596479
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资金
- Key Project of China for Basic Research [2007CB815601, 2010CB933501]
- Outstanding Youth Fund [50625205]
- National Natural Science Foundation of China [20971123, 60736032, 21007070, 51002153]
- Natural Science Foundation of Fujian Province [2009J5017, 2010J0101]
Using lattice matched ZnO substrates, wurtzite single crystalline Mg0.49Zn0.51O films were obtained by reactive magnetron cosputtering method, and the heterostructures of MgZnO/ZnO were fabricated into metal-semiconductor-metal solar-blind photodetectors (SBPDs). Calculated and experimental results demonstrate that the response of the ZnO substrate can be suppressed by adopting a thick MgZnO epilayer. The SBPD with a 2 mu m thick MgZnO epilayer shows a peak responsivity of 304 mA/W at 260 nm under 10 V bias, which is comparable to the highest value ever reported in MgZnO-based SBPDs. A rejection ratio (R260 nm/R365 nm) over 5 x 10(2) is also observed, indicating fully suppression of the signal from ZnO substrate. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3596479]
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