4.6 Article

Graphene microwave transistors on sapphire substrates

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Engineering, Electrical & Electronic

Fabrication and Characterization of an Epitaxial Graphene Nanoribbon-Based Field-Effect Transistor

Nan Meng et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)

Article Multidisciplinary Sciences

High-frequency, scaled graphene transistors on diamond-like carbon

Yanqing Wu et al.

NATURE (2011)

Article Materials Science, Multidisciplinary

Transport scattering time probed through rf admittance of a graphene capacitor

E. Pallecchi et al.

PHYSICAL REVIEW B (2011)

Article Physics, Applied

Investigation of high frequency performance limit of graphene field effect transistors

Ercag Pince et al.

APPLIED PHYSICS LETTERS (2010)

Article Engineering, Electrical & Electronic

Dual-Gate Graphene FETs With f(T) of 50 GHz

Yu-Ming Lin et al.

IEEE ELECTRON DEVICE LETTERS (2010)

Article Chemistry, Multidisciplinary

Sub-100 nm Channel Length Graphene Transistors

Lei Liao et al.

NANO LETTERS (2010)

Article Multidisciplinary Sciences

High-speed graphene transistors with a self-aligned nanowire gate

Lei Liao et al.

NATURE (2010)

Article Nanoscience & Nanotechnology

Boron nitride substrates for high-quality graphene electronics

C. R. Dean et al.

NATURE NANOTECHNOLOGY (2010)

Review Nanoscience & Nanotechnology

Graphene transistors

Frank Schwierz

NATURE NANOTECHNOLOGY (2010)

Article Engineering, Electrical & Electronic

Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors

Christos Dimitrakopoulos et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2010)

Article Engineering, Electrical & Electronic

Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates

J. S. Moon et al.

IEEE ELECTRON DEVICE LETTERS (2009)

Article Chemistry, Multidisciplinary

Operation of Graphene Transistors at Gigahertz Frequencies

Yu-Ming Lin et al.

NANO LETTERS (2009)

Article Physics, Multidisciplinary

Transport Properties of Graphene in the High-Current Limit

Amelia Barreiro et al.

PHYSICAL REVIEW LETTERS (2009)

Article Nanoscience & Nanotechnology

Current saturation in zero-bandgap, topgated graphene field-effect transistors

Inanc Meric et al.

NATURE NANOTECHNOLOGY (2008)