期刊
APPLIED PHYSICS LETTERS
卷 98, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3541782
关键词
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资金
- Cariplo Foundation
- Italian MIUR [20085JEWJ2]
We report on the observation of room temperature direct band gap photoluminescence in compressively strained-Ge multiple quantum wells with Ge-rich SiGe barriers. A detailed experimental study of the temperature dependence of the photoluminescence is carried out from 5 K up to room temperature. We find that the direct gap photoluminescence at room temperature is due to the thermal excitation of carriers from L-type to Gamma-type confined states. Room temperature photoluminescence shows that Ge/SiGe multiple quantum wells are promising candidates for efficient light emitting devices monolithically integrated on Si. (C) 2011 American Institute of Physics. [doi:10.1063/1.3541782]
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