期刊
APPLIED PHYSICS LETTERS
卷 99, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3627186
关键词
-
资金
- ST Microelectronics RD in Catania
- LAST POWER
- ENIAC [120218]
The mechanism limiting the channel mobility in metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated in Al-implanted 4H-SiC is discussed comparing different post-implantation annealings. In spite of the improved interfacial morphology in carbon capped samples during annealing, the observed reduction of the mobility (from 40 to 24 cm(2) V-1 s(-1)) suggests that interfacial roughness does not significantly impact the transport in the channel. Furthermore, the temperature dependence of the mobility demonstrates that Coulomb scattering is the main degradation mechanism due to the presence of trapped charges at the SiO2/SiC interface. (C) 2011 American Institute of Physics. [doi:10.1063/1.3627186]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据