相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。GaP-nucleation on exact Si (001) substrates for III/V device integration
Kerstin Volz et al.
JOURNAL OF CRYSTAL GROWTH (2011)
High-Performance Quantum Dot Lasers and Integrated Optoelectronics on Si
Zetian Mi et al.
PROCEEDINGS OF THE IEEE (2009)
Defect reduction of GaAs/Si epitaxy by aspect ratio trapping
J. Z. Li et al.
JOURNAL OF APPLIED PHYSICS (2008)
Heteroepitaxy of GaP on Si:: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions
I. Nemeth et al.
JOURNAL OF CRYSTAL GROWTH (2008)
Monolithic integration of Ga(NAsP)/(BGa)P multi-quantum well structures on (001) silicon substrate by MOVPE
B. Kunert et al.
JOURNAL OF CRYSTAL GROWTH (2008)
Annealing experiments of the GaP based dilute nitride Ga(NAsP)
B. Kunert et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2008)
Influence of annealing on the optical and structural properties of dilute N-containing III/V semiconductor hetero structures
K. Volz et al.
JOURNAL OF CRYSTAL GROWTH (2007)
Lasing in optically pumped Ga(NAsP)/GaP heterostructures
S. Borck et al.
APPLIED PHYSICS LETTERS (2006)
Near room temperature electrical injection lasing for dilute nitride Ga(NAsP)/GaP quantum-well structures grown by metal organic vapour phase epitaxy
B. Kunert et al.
ELECTRONICS LETTERS (2006)
Direct-band-gap Ga(NAsP)-material system pseudomorphically grown on GaP substrate
B Kunert et al.
APPLIED PHYSICS LETTERS (2006)
分享论文
