期刊
APPLIED PHYSICS LETTERS
卷 99, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3624927
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资金
- German Science Foundation (DFG)
- German ministry for education and research (BMBF)
- EPSRC (UK)
- Royal Academy of Engineering (UK)
The lattice-matched growth of the direct band gap material Ga(NAsP) is a seminal concept for the monolithic integration of III/V laser on a silicon substrate. Here, we report on the growth, characterization, and lasing properties of Ga(NAsP)/(BGa)(AsP) multi quantum well heterostructures embedded in (BGa) P cladding layers which were deposited on an exactly oriented (001) Si substrate. Structural investigations confirm a high crystal quality without any indication for misfit or threading dislocation formation. Laser operation between 800 nm and 900 nm of these broad area device structures was achieved under optical pumping as well as electrical injection for temperatures up to 150 K. This proof of principle points to the enormous potential of Ga(NAsP) as an optical complement to Si microelectronics. (C) 2011 American Institute of Physics. [doi:10.1063/1.3624927]
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