Superlattices of Bi2Se3/In2Se3: Growth characteristics and structural properties

Superlattices (SLs) consisted of alternating Bi2Se3 and In2Se3 layers are grown on Si(111) by molecular-beam epitaxy. Bi2Se3, a three-dimensional topological insulator (TI), showed good chemical and structural compatibility with In2Se3, a normal band insulator with large energy bandgap. The individual layers in the SLs are very uniform, and the hetero-interfaces are sharp. Therefore, such SL structures are potential candidates for explorations of the quantum size effects of TIs. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3610971]