4.6 Article

Tunable electronic structures of graphene/boron nitride heterobilayers

期刊

APPLIED PHYSICS LETTERS
卷 98, 期 8, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3556640

关键词

-

资金

  1. National Natural Science Foundation of China [10974119]
  2. Natural Science Fund for Distinguished Young Scholars of Shandong Province [JQ201001]
  3. Independent Innovation Foundation of Shandong University (IIFSDU) [2009JQ003]
  4. Shanghai Supercomputer Center

向作者/读者索取更多资源

Using first-principles calculations, we show that the band gap and electron effective mass (EEM) of graphene/boron nitride heterobilayers (C/BN HBLs) can be modulated effectively by tuning the interlayer spacing and stacking arrangement. The HBLs have smaller EEM than that of graphene bilayers (GBLs), and thus higher carrier mobility. For specific stacking patterns, the nearly linear band dispersion relation of graphene monolayer can be preserved in the HBLs accompanied by a small band-gap opening. The tunable band gap and high carrier mobility of these C/BN HBLs are promising for building high-performance nanodevices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3556640]

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据